| 2005 | J. E. Birkholz, K. Bothe, D. Macdonald, and J. Schmidt: Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements. In: J. Appl. Phys., 2005, 103708-1-103708-6 |
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| 2005 | D. Macdonald, T. Roth, P. N. K. Deenapanray, K. Bothe, P. Pohl, Jan Schmidt: Formation rates of iron-acceptor pairs in crystalline silicon. In: J. Appl. Phys., 2005, 083509-1-083509-5 |
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| 2005 | J. Schmidt and D. Macdonald: Recombination activity of iron-gallium and iron-indium pairs in silicon. In: J. Appl. Phys., 2005, 113712-1-113712-9 |
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| 2001 | Jan Schmidt, M. Kerr: Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride. In: Solar Energy Materials and Solar Cells, 2001, 585-591 |
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| 2001 | Jan Schmidt, I. Dierking: Localization and imaging of local shunts in solar cells using polymer-dispersed liquid crystals. In: Prog. Photovolt., 2001, 263-271 |
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| 2001 | Jan Schmidt, M. Kerr, A. Cuevas: Surface passivation of Si solar cells using plasma-enhanced chemical vapor deposited SiN films and thermal SiO2/plasma SiN stacks. In: Semiconductor Sience and Technology, 2001, 164-170 |
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| 2001 | M. Kerr, J. Schmidt, A. Cuevas, J. H. Bultman: Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide. In: J. Appl. Phys., 2001, 3821-3826 |
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| 2000 | M. Kerr, J. Schmidt, A. Cuevas: Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide. In: Prog. Photovolt., 2000, 529-536 |
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| 2000 | Jan Schmidt, M. Kerr, P. P. Altermatt: Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities. In: J. Appl. Phys., 2000, 1494-1497 |
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